2SC2620-QBTR

The 2SC2620-QBTR is one member of the 2SC2620 family which is designed as the silicon NPN epitaxial planar device that can be used in VHF amplifier, Local oscillator applications.

The absolute maximum ratings of the 2SC2620-QBTR can be summarized as:(1)Collector-base voltage: 30 V;(2)Collector-emitter voltage: 20 V;(3)Emitter-base voltage: 4 V;(4)Collector current: 20 mA;(5)Base current: 20 mA;(6)Collector power dissipation: 100 mW;(7)Junction temperature: 150 °C;(8)Storage temperature range: -55 to 150 °C.

The electrical characteristics of 2SC2620-QBTR can be summarized as:(1)Collector to base breakdown voltage: 20 V;(2)Collector to emitter breakdown voltage: 20 V;(3)Emitter to base breakdown voltage: 4 V;(4)Collector cutoff current: 0.5 uA;(5)Emitter cutoff current: 0.5 uA;(6)CDC current transfer ratio: 60 to 200;(7)Collector to emitter saturation voltage: 0.17 V;(8)Base to emitter voltage: 0.72 V;(9)Gain bandwidth product: 940 MHz;(10)Collector output capacitance: 0.9 pF. If you want to know more information about the 2SC2620-QBTR, please download the datasheet in www.seekic.com or www.chinaicmart.com .