2SC2625

The 2SC2625 is designed as the silicon NPN power transistor device that can be used in wide range of applications such as (1)switching regulators; (2)ultrasonic generators; (3)high frequency inverters; (4)general purpose power amplifiers. And this device has three points of features: (1)With TO-3PN package; (2)High voltage ,high speed switching; (3)High reliability.

The absolute maximum ratings of the 2SC2625 can be summarized as:(1)Collector to Base Voltage: 450 V;(2)Collector to Emitter Voltage: 400 V;(3)Emitter to Base Voltage: 7.0 V;(4)Collector Current: 10.0 A;(5)Total Power Dissipation: 80 W;(6)Junction Temperature: 150 ;(7)Storage Temperature: -55 to +150 .

The electrical characteristics of this device can be summarized as:(1)Collector Cutoff Current: 1.0 mA;(2)Emitter Cutoff Current: 0.1 mA;(3)DC Current Gain: 10;(4)Collector-emitter breakdown voltage: 400 V;(5)Collector-base breakdown voltage: 400 V;(5)Emitter-base breakdown voltage: 7.0 V;(6)Collector-emitter saturation voltage: 1.2 V;(7)Base-emitter saturation voltage: 1.5 V. If you want to know more information such as the electrical characteristics about the 2SC2625, please download the datasheet in www.seekic.com or www.chinaicmart.com.