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SeekIC No. : 003436619 Detail

2SC2712-GR(T5L,F,T): TRANS NPN 50V 150MA S-MINI

2SC2712-GR(T5L,F,T) Data Sheet

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Part Number:: 2SC2712-GR(T5L,F,T)
Mfg:
Supply Ability:: 5000

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Upload time: 2024/4/28

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What is this?

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Product Details

Quick Details

Series:	-	Manufacturer:	Toshiba
Transistor Type:	NPN	Current - Collector (Ic) (Max):	150mA
Voltage - Collector Emitter Breakdown (Max):	50V	Resistor - Base (R1) (Ohms):	-
Capacitance :	300 pF	Vce Saturation (Max) @ Ib, Ic:	250mV @ 10mA, 100mA
Current - Collector Cutoff (Max):	-	Resistor - Emitter Base (R2) (Ohms):	-
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 2mA, 6V	Power - Max:	150mW
Frequency - Transition:	80MHz	Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3	Supplier Device Package:	S-Mini

Description

Series: -
Transistor Type: NPN
Resistor - Base (R1) (Ohms): -
Current - Collector Cutoff (Max): -
Resistor - Emitter Base (R2) (Ohms): -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Frequency - Transition: 80MHz
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Power - Max: 150mW
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Packaging: Cut Tape (CT)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Manufacturer: Toshiba
Supplier Device Package: S-Mini

Parameters:

Technical/Catalog Information	2SC2712-GR(T5L,F,T)
Vendor	Toshiba
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	150mA
Power - Max	150mW
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA, 6V
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA
Frequency - Transition	80MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	S-mini
Packaging	Tape & Reel (TR)
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2SC2712 GR T5L,F,T 2SC2712GRT5L,F,T 2SC2712 GRTR ND 2SC2712GRTRND 2SC2712-GRTR

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