2SC2714-Y

The 2SC2714-Y is one member of the 2SC2714 family which is designed as the TOSHIBA TOSHIBA transistor silicon NPN epitaxial planar type (PCT process) device that can be used in high frequency amplifier and FM, RF, MIX,IF amplifier applications. Features of this device are:(1)Small reverse transfer capacitance: Cre = 0.7 pF (typ.);(2)Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz).

The absolute maximum ratings of the 2SC2714-Y can be summarized as:(1)Collector-base voltage: 40 V;(2)Collector-emitter voltage: 30 V;(3)Emitter-base voltage: 4 V;(4)Collector current: 20 mA;(5)Base current: 4 mA;(6)Collector power dissipation: 100 mW;(7)Junction temperature: 125 °C;(8)Storage temperature range: -55 to 125 °C.

The electrical characteristics of 2SC2714-Y can be summarized as:(1)Collector cut-off current: 0.5 uA;(2)Emitter cut-off current: 0.5 uA;(3)DC current gain: 40 to 200;(4)Reverse transfer capacitance:0.70 pF;(5)Transition frequency: 550 MHz;(6)Collector-base time constant: 30 ps;(7)Noise figure: 2.5 to 5.0 dB;(8)Power gain: 17 to 23 dB. If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .