2SC2873-Y

The 2SC2873-Y is designed as one kind of TOSHIBA transistor silicon NPN epitaxial type (PCT process) that can be used in power amplifier and power switching applications. Features of this device are:(1)low saturation voltage is 0.5 V (max.);(2)high speed switching time is 1.0 us (typ.);(3)Pc= 1 to 2 W (mounted on ceramic substrate);(4)small flat package;(5)complementary to 2SA1213.

The absolute maximum ratings of the 2SC2873-Y can be summarized as:(1)Collector-base breakdown voltage: 50 V;(2)Collector-emitter breakdown voltage: 50 V;(3)Emitter-base voltage: 5 V;(4)Collector current: 2 A;(5)base current: 0.4 A;(6)collector power dissipation: 500 mW;(7)junction temperature: 150 ;(8)storage temperature range: -55 to +150 .

The electrical characteristics of this device can be summarized as:(1)collector cut-off current: 0.1 uA;(2)emitter cut-off current: 0.1 uA;(3)collector-emitter breakdown voltage: 70 to 240;(4)collector-emitter saturation voltage: 0.5 V;(5)base-emitter saturation voltage: 1.2 V;(6)transistion frequency: 120 MHz;(7)collector output capacitance:30 pF. If you want to know more information about the 2SC2873-Y, please download the datasheet in www.seekic.com or www.chinaicmart.com .