Purchase 2SC2880, In-stock 2SC2880 From SeekIC.
MFG:TOSHIBA
- Table of contents:
2SC2880
-
Suppliers
DataSheet
General Description
2SC2880 Maximum Ratings
|
Parameter |
Symbol |
Rating |
Unit |
|
Collector-Emitter Voltage |
VCEO |
150 |
V |
|
Collector-Base Voltage |
VCBO |
200 |
V |
|
Emitter-Base Voltage |
VEBO |
5 |
V |
|
Collector Current |
IC |
50 |
mA |
|
Base Current |
IB |
10 |
mA |
|
Collector Power Dissipation |
PC |
500 |
mW |
|
PC * |
800 | ||
|
Jumction temperature |
Tj |
150 |
|
|
Storage temperature |
Tstg |
-55 to +150 |
2SC2880 Features
·High Voltage : VCEO = 150V
·High Transition Frequency : fT = 120MHz(typ.)
·Small Flat Package
·Complementary to 2SA1200
·High Transition Frequency : fT = 120MHz(typ.)
·Small Flat Package
·Complementary to 2SA1200
2SC2880
PDF/DataSheet Download
- Datasheet: 2SC2880
- File Size: 192925 KB
- Manufacturer: Toshiba
- Click here to Download
- ·2SC0829
- PANASONIC [Panasonic Semiconductor]
- Silicon NPN epitaxial planar type
- 114565 KB
- ·2SC1008
- ETC [ETC]
- TRANSISTOR NPN
- 360492 KB
- ·2SC1009
- NEC [NEC]
- FM/AM RF AMPLIFIER, MIXER,OSCILLATOR,CONVERTER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
- 332840 KB
- ·2SC1009A
- NEC [NEC]
- FM/AM RF AMPLIFIER, MIXER,OSCILLATOR,CONVERTER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
- 332840 KB
- ·2SC1012
- ETC [ETC]
- High Voltage Transistors
- 81381 KB
- ·2SC1012A
- ETC [ETC]
- High Voltage Transistors
- 81381 KB
- ·2SC1030
- ETC [ETC]
- SILICON NPN TRASISTORS
- 45767 KB
- ·2SC1033
- ETC [ETC]
- High Voltage Transistors
- 81381 KB
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2SC2879
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2SC2878
2SC2878 is a kind of silicon NPN epitaxial type. It is designed for use in muting and switching fields. There are some features as follows. First is high emitter-base voltage: VEBO=25 V (Min). The second is high reverse hFE: reverse hFE=150 (typ) at VCE=-2 V...
2SC2877
The 2SC2877 features: `With TO-126 package`Complement to type 2SA1217`Good linearity of hFE
2SC2873-Y
The 2SC2873-Y is designed as one kind of TOSHIBA transistor silicon NPN epitaxial type (PCT process) that can be used in power amplifier and power switching applications. Features of this device are:(1)low saturation voltage is 0.5 V (max.);(2)high speed swi...
2SC2873
2SC2859
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