Purchase 2SC2883, In-stock 2SC2883 From SeekIC.
MFG:120000 Package Cooled:TOSHIBA D/C:07+
- Table of contents:
2SC2883
-
Suppliers
DataSheet
General Description
2SC2883 Maximum Ratings
|
Parameter |
Symbol |
Rating |
Unit |
| Collector-Base Voltage |
VCBO |
30 |
V |
| Collector-Emitter Voltage |
VCEO |
30 |
V |
| Emitter-Base Voltage |
VEBO |
5 |
V |
| Collector Current |
IC |
1.5 |
A |
| Base Current |
IB |
0.3 |
A |
| Collector Power Dissipation |
PC |
500 |
mW |
|
PC* |
1000 | ||
| Jumction temperature |
Tj |
150 |
|
| Storage temperature Range |
Tstg |
-55 to +150 |
2SC2883 Features
·Suitable For Output Stage of 3 Watts Amplifier
·Small Flat Package
·PC = 1 to 2W (mounted on ceramic substrate)
·Complementary to 2SA1203
·Small Flat Package
·PC = 1 to 2W (mounted on ceramic substrate)
·Complementary to 2SA1203
2SC2883
PDF/DataSheet Download
- Datasheet: 2SC2883
- File Size: 161410 KB
- Manufacturer: Toshiba
- Click here to Download
- ·2SC0829
- PANASONIC [Panasonic Semiconductor]
- Silicon NPN epitaxial planar type
- 114565 KB
- ·2SC1008
- ETC [ETC]
- TRANSISTOR NPN
- 360492 KB
- ·2SC1009
- NEC [NEC]
- FM/AM RF AMPLIFIER, MIXER,OSCILLATOR,CONVERTER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
- 332840 KB
- ·2SC1009A
- NEC [NEC]
- FM/AM RF AMPLIFIER, MIXER,OSCILLATOR,CONVERTER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
- 332840 KB
- ·2SC1012
- ETC [ETC]
- High Voltage Transistors
- 81381 KB
- ·2SC1012A
- ETC [ETC]
- High Voltage Transistors
- 81381 KB
- ·2SC1030
- ETC [ETC]
- SILICON NPN TRASISTORS
- 45767 KB
- ·2SC1033
- ETC [ETC]
- High Voltage Transistors
- 81381 KB
2SC2883 Relative Products
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2SC2881
2SC2880
2SC2879
Features of the 2SC2879 are:(1)specified 12.5V,28MHz characteristics;(2)output power:Po=100WPEP;(3)power gain:Gp=13dB;(4)collector efficiency:C=35%(Min.);(5)intermodulation distortion:IMD=-24dB(Max.)(MIL standard). The absolute maximum ratings of the 2SC287...
2SC2878
2SC2878 is a kind of silicon NPN epitaxial type. It is designed for use in muting and switching fields. There are some features as follows. First is high emitter-base voltage: VEBO=25 V (Min). The second is high reverse hFE: reverse hFE=150 (typ) at VCE=-2 V...
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