Features: • Low Noise and High Gain. f = 200 MHz, 500 MHz NF: 2.3 dB, 2.4 dB |S21e|: 20 dB, 12.5 dB• Large PT in Small Package. PT: 2 W with 16 cm2× 0.7 mm Ceramic Substrate.Specifications Collector to Base VoltageCollector to Emitter VoltageEmitter to Base VoltageCollector Curren...
2SC2954: Features: • Low Noise and High Gain. f = 200 MHz, 500 MHz NF: 2.3 dB, 2.4 dB |S21e|: 20 dB, 12.5 dB• Large PT in Small Package. PT: 2 W with 16 cm2× 0.7 mm Ceramic Substrate.Specificatio...
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| Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Termal Resistance Junction Temperature Storage Temperature |
VCBO VCEO VEBO IC PT* Rth(j-a)* Tj Tstg |
35 18 3.0 150 2.0 62.5 150 -65 to +150 |
V V V mA W /W |
|
* With 16 cm2* 0.7 mm Ceramic Substrate | |||