Features: ·High DC current gain: hFE (1) = 100320.·Low saturation voltage: VCE (sat) = 0.4 V (max) (IC = 500 mA, IB = 20 mA).Specifications Parameter Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base volt...
2SC3265: Features: ·High DC current gain: hFE (1) = 100320.·Low saturation voltage: VCE (sat) = 0.4 V (max) (IC = 500 mA, IB = 20 mA).Specifications Parameter Symbol Rating Unit Collector-...
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Parameter |
Symbol |
Rating |
Unit |
Collector-base voltage |
VCBO |
30 |
V |
Collector-emitter voltage |
VCEO |
25 |
V |
Emitter-base voltage |
VEBO |
5 |
V |
Collector current |
IC |
800 |
mA |
Collector current (pulse) |
ICP |
160 |
mA |
Collector dissipation |
PC |
200 |
mW |
Jumction temperature |
Tj |
150 |
|
Storage temperature |
Tstg |
-55 to +125 |
The 2SC3265 is designed as the TOSHIBA transistor silicon NPN epitaxial type (PCT process) that can be used in low frequency power amplifier and power switching applications. Features of this device are:(1)high DC current gain: hFE = 100 to 320;(2)low saturation voltage: VCE(sat) = 0.4 V (max.);(3)complementary to 2SA1298.
The absolute maximum ratings of the 2SC3265 can be summarized as:(1)collector-base voltage: 30 V;(2)collector-emitter voltage: 25 V;(3)emitter-base voltage: 5 V;(4)collector current: 800 mA;(5)base current: 160 mA;(6)collector power dissipation: 200 mW;(7)junction temperature: 150 ;(8)storage temperature range: -55 to +150 . If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .