2SC3265

Features: ·High DC current gain: hFE (1) = 100320.·Low saturation voltage: VCE (sat) = 0.4 V (max) (IC = 500 mA, IB = 20 mA).Specifications Parameter Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base volt...

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SeekIC No. : 004222254 Detail

2SC3265: Features: ·High DC current gain: hFE (1) = 100320.·Low saturation voltage: VCE (sat) = 0.4 V (max) (IC = 500 mA, IB = 20 mA).Specifications Parameter Symbol Rating Unit Collector-...

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Part Number:
2SC3265
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Description



Features:

·High DC current gain: hFE (1) = 100320.
·Low saturation voltage: VCE (sat) = 0.4 V (max) (IC = 500 mA, IB = 20 mA).





Specifications

Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
25
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
800
mA
Collector current (pulse)
ICP
160
mA
Collector dissipation
PC
200
mW
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +125





Description

The 2SC3265 is designed as the TOSHIBA transistor silicon NPN epitaxial type (PCT process) that can be used in low frequency power amplifier and power switching applications. Features of this device are:(1)high DC current gain: hFE = 100 to 320;(2)low saturation voltage: VCE(sat) = 0.4 V (max.);(3)complementary to 2SA1298.

The absolute maximum ratings of the 2SC3265 can be summarized as:(1)collector-base voltage: 30 V;(2)collector-emitter voltage: 25 V;(3)emitter-base voltage: 5 V;(4)collector current: 800 mA;(5)base current: 160 mA;(6)collector power dissipation: 200 mW;(7)junction temperature: 150 ;(8)storage temperature range: -55 to +150 . If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .






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