2SC3356-T1B R25

The 2SC3356-T1BR25 is one member of the 2SC3356 family which is designed as the NPN silicon epitaxial transistor that has two points of features:(1)Low noise and high gain: NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC= 7 mA, f = 1.0 GHz; (2)High power gain: MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz.

The absolute maximum ratings of the 2SC3356-T1BR25 can be summarized as:(1)Collector to Base Voltage: 20 V;(2)Collector to Emitter Voltage: 12 V;(3)Emitter to Base Voltage: 3.0 V;(4)Collector Current: 100 mA;(5)Total Power Dissipation: 200 mW;(6)Junction Temperature: 150 ;(7)Storage Temperature: -65 to +150 .

The electrical characteristics of this device can be summarized as:(1)Collector Cutoff Current: 1.0 uA;(2)Emitter Cutoff Current: 1.0 uA;(3)DC Current Gain: 50 to 250;(4)Gain Bandwidth Product: 7.0 GHz;(5)Feed-Back Capacitance: 0.55 to 1.0 pF;(6)Insertion Power Gain: 11.5 dB;(7)Noise Figure: 1.1 to 2.0 dB. If you want to know more information such as the electrical characteristics about the 2SC3356-T1BR25, please download the datasheet in www.seekic.com or www.chinaicmart.com.