2SC3356F

Features:






Specifications






Description

      The 2SC3356F is designed as NPN silicon plastic encapsulated transistor.
      2SC3356F has three features.The first one is that it would have low noise amplifier at VHF,UHF and CATV band.The second one is that it would have low noise and high gain.The third one is that it would also have high power gain.That are all the features.
      Some absolute maximum ratings of 2SC3356F have been concluded into several point as follow.The first one is about its collector to base voltage which would be 20 V.The second one is about its collector to emitter voltage which would be 12 V.The third one is about its emitter to base voltage which would be 3 V.The fourth one is about its collector current-continuous which would be 0.1 A.The fifth one is about its total device dissipation which would be 200 mW.The sixth one is about its junction temperature which would be 150 °C.The last one is about its storage temperature which would be from -55 to 150 °C.
      Aslo some electrical characteristics about 2SC3356F with condition which would be  Ta=25 unless otherwise specified.The first one is about its collector-base breakdown voltage which would be  20(min) V with condition of Ic=10A,Ie=0.The second one is about its collector-emitter breakdown voltage which would be 12(min) V with condition of Ic=1mA,Ib=0.The third one about its collector cut-off current which would be 1(max) A with condition of Vcb=10V,Ie=0.The fourth one is about its emitter cut-off current which would be 1 A with condition of Veb=1V,Ic=0.The fifth one is about its DC current gain which would be from 50 to 250 with condition of Vce=10V,Ic= 20mA.The sixth one is about its transition frequency which would be 7(typ) GHz with condition of Vce=10V,Ic= 20mA.The last one is about its collector output capacitance which would be 2(max) dB with condition of Vce=10V,Ic= 7mA,f = 1GHz.For more information please contact us.