Features: · Adoption of FBET process.· High breakdown voltage (VCEO=160V).· Excellent linearity of hFE and small Cob.· Fast switching speed.· Very small size marking it easy to provide highdensity, small-sized hybrid ICs.PinoutSpecifications Absolute maximum ratings VCBO [V] 180 ...
2SC3645: Features: · Adoption of FBET process.· High breakdown voltage (VCEO=160V).· Excellent linearity of hFE and small Cob.· Fast switching speed.· Very small size marking it easy to provide highdensity, ...
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| Absolute maximum ratings | |
|---|---|
| VCBO [V] | 180 |
| VCEO [V] | 160 |
| IC [A] | 0.14 |
| PC [W] | 1.3 |
| Electrical characteristics | |
|---|---|
| hFE min | 140 |
| hFE max | 400 |
| VCE [V] | 5 |
| IC [mA] | 10 |
| fT typ [MHz] | 150 |
| VCE [V] | 10 |
| IC [mA] | 10 |
| VCE (sat) typ [V] | 0.07 |
| VCE (sat) max [V] | 0.3 |
| IC [mA] | 50 |
| IB [mA] | 5 |
| Parameter |
Symbol |
Conditions |
Ratings |
Unit |
| Collector-base voltage |
VCBO |
()180 |
V | |
| Collector-emitter voltage |
VCEO |
()160 |
V | |
| Emitter-base voltage |
VEBO |
()5 |
V | |
| Collector current |
Ic |
()140 |
mA | |
| Collector Current (Pulse) |
ICP |
()200 |
mA | |
| Collector Dissipation |
PC1 PC2 |
Moutned on ceramic board (250mm2´0.8mm) |
500 1.3 |
mW |
| Junction temperature |
Tj |
150 |
°C | |
| Storage temperature |
Tstg |
-55 to +150 |
°C |