2SC3646

Features: · Adoption of FBET, MBIT processes.· High breakdown voltage and large current capacity.· Fast switching time.· Very small size making it easy to provide highdensity, small-sized hybrid ICs.PinoutSpecifications Parameter Symbol Conditions Ratings Unit Collector-base volt...

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SeekIC No. : 004222440 Detail

2SC3646: Features: · Adoption of FBET, MBIT processes.· High breakdown voltage and large current capacity.· Fast switching time.· Very small size making it easy to provide highdensity, small-sized hybrid ICs...

floor Price/Ceiling Price

Part Number:
2SC3646
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/30

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Product Details

Description



Features:

· Adoption of FBET, MBIT processes.
· High breakdown voltage and large current capacity.
· Fast switching time.
· Very small size making it easy to provide highdensity, small-sized hybrid ICs.





Pinout






Specifications

Parameter
Symbol
Conditions
Ratings
Unit
Collector-base voltage
VCBO
()120
V
Collector-emitter voltage
VCEO
()100
V
Emitter-base voltage
VEBO
()6
V
Collector current
Ic
()1
mA
Collector Current (Pulse)
ICP
()2
mA
Collector Dissipation
PC
Moutned on ceramic board (250mm2´0.8mm)
500
1.3
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55 to +150
°C


Absolute maximum ratings
VCEO [V] 100
IC [A] 1
PC [W] 1.3
When mounted on ceramic substrate (250mm²*0.8mm) 1unit
Electrical characteristics
hFE min 100
hFE max 400
VCE [V] 5
IC [A] 0.1
VCE (sat) typ [V] 0.1
VCE (sat) max [V] 0.4
IC [A] 0.4
IB [mA] 40





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