Features: ` Large current capacity (IC=2A).` Adoption of MBIT process.` High DC current gain (hFE=800 to 3200).` Low collector-to-emitter saturation voltage (VCE(sat)0.5V).` High VEBO (VEBO15V).Application· Low frequency general-purpose amplifiers, drivers.PinoutSpecifications Parameter Symb...
2SC3807: Features: ` Large current capacity (IC=2A).` Adoption of MBIT process.` High DC current gain (hFE=800 to 3200).` Low collector-to-emitter saturation voltage (VCE(sat)0.5V).` High VEBO (VEBO15V).Appl...
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Parameter | Symbol | Conditions | Ratings | Unit |
Collector-to-Base Voltage | VCBO | 30 | V | |
Collector-to-Emitter Voltage | VCEO | 25 | V | |
Emitter-to-Base Voltage | VEBO | 15 | V | |
Collector Current | IC | 2 | A | |
Collector Current (Pulse) | ICP | 4 | A | |
Collector Dissipation | PC | 1.2 | W | |
Tc=25°C | 15 | W | ||
Junction Temperature | Tj | 150 | °C | |
Storage Temperature | Tstg | 55 to +150 | °C |
Absolute maximum ratings | |
---|---|
VCEO [V] | 25 |
VEBO [V] | 15 |
IC [A] | 2 |
PC [W] | 15 |
Electrical characteristics | |
---|---|
hFE min | 800 |
hFE max | 3200 |
VCE [V] | 5 |
IC [mA] | 500 |
VCE (sat) typ [V] | 0.15 |
VCE (sat) max [V] | 0.5 |
IC [mA] | 1000 |
IB [mA] | 20 |