Features: ` Large current capacity (IC=2A).` Adoption of MBIT process.` High DC current gain (hFE=800 to 3200).` Low collector-to-emitter saturation voltage (VCE(sat)0.5V).` High VEBO (VEBO15V).Application· Low frequency general-purpose amplifiers, drivers.PinoutSpecifications Absolut...
2SC3808: Features: ` Large current capacity (IC=2A).` Adoption of MBIT process.` High DC current gain (hFE=800 to 3200).` Low collector-to-emitter saturation voltage (VCE(sat)0.5V).` High VEBO (VEBO15V).Appl...
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| Absolute maximum ratings | |
|---|---|
| VCEO [V] | 60 |
| VEBO [V] | 15 |
| IC [A] | 2 |
| PC [W] | 15
Tc=25°C |
| Electrical characteristics | |
|---|---|
| hFE min | 800 |
| hFE max | 3200 |
| VCE [V] | 5 |
| IC [mA] | 500 |
| VCE (sat) typ [V] | 0.2 |
| VCE (sat) max [V] | 0.5 |
| IC [mA] | 1000 |
| IB [mA] | 20 |
| Parameter | Symbol | Conditions | Ratings | Unit |
| Collector-to-Base Voltage | VCBO | 80 | V | |
| Collector-to-Emitter Voltage | VCEO | 60 | V | |
| Emitter-to-Base Voltage | VEBO | 15 | V | |
| Collector Current | IC | 2 | A | |
| Collector Current (Pulse) | ICP | 4 | A | |
| Collector Dissipation | PC | 1.2 | W | |
| Tc=25°C | 15 | W | ||
| Junction Temperature | Tj | 150 | °C | |
| Storage Temperature | Tstg | 55 to +150 | °C |