2SC3834

The 2SC3834 is a type of isc silicon NPN power transistor.low collector saturation voltage:VCE(sat) is 0.5V(Max) whe n IC is 3A;collector-emitter breakdown voltage:V(BR)CEO is 120V (Min);good linearity of hFE

The absolute maximum ratings and electrical characteristics of the 2SC3834 can be summarized as:(1):collector-base voltage is 200V;(2):collector-emitter voltage(VCEO) is 120V;(3):emitter-base voltage(VEBO) is 8V;(4):collector curren t-continuous(IC) is 7A; (5):collector current-pulse(ICM) is 14A;(6):base current-continuous(IB) is 3A;(7):collector pow er dissipation(at TC=25) is 50W;(8):junction temperature(TJ) is 150;(9):storage temperature(Tstg) ranges from -55 to 150.Electrical characteristics:(1):collector emitter breakdown voltage is 120V max when IC is 50mA and IB is 0;(2):collector-emitter saturation voltage is 0.5V min when IC is 3A and IB is 0.3A;(3):base-emitter saturation volt age is 1.2V when IC is 3A and IB is 0.3A;(4):collector cutoff current is 100uA when VCB is 200V and IE is 0;(5):emitt er cutoff current is 100uA when VEB is 8V and IC is 0;(6):DC current gain is 70 min and 220 max when IC is 3A and VCE is 4V;(7):current-gain-bandwidth product is 30MHz when IE is -0.5A and VCE is 12V;(8):output capacitance is 110PF when IE is 0, VCB is 10V and ftest is 1.0MHz.

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