2SC3847

      Here is the description about 2SC3847 of the Silicon High Speed Power Transistors.
      The absolute maximum ratings of 2SC3847 are at Ta = 25°C ambient temperature unless otherwise specified. The Collector-Emitter Voltage (VCEO )is 800V. The Collector-Base Voltage(VCBO)is 1200V.The  Emitter-Base Voltage (VEBO )is 7V. The collector Current is 10A(Ic) and 20A(Icm). The bath collector is 5A. The collector Power Dissipation is 85W.Its junction temperature is 150°C. Its storage temperature is from -55°C to +150°C.
      And here are the Electrical Characteristics of 2SC3847 (Ta =25°C). The Collector-Emitter sustaining Voltage is from 800Vdc to Max (Vceo) and 900Vdc (Vcex). The Collector-Base Breakdown Voltage is from 1200 Vdc to Max. The Emitter-Base Breakdown Voltage is from 7.0 Vdc to Max. The Collector cut-off current is from min to 100uA. The Emitter cut-off current is from min to100uA. The Collector-emitter saturation voltage is from min to 1.5V. The Base-emitter saturation voltage is from min to 2V. The DC current gain is from min to 100.
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