2SC4094

Features: • NF = 1.2 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 7 mA• |S21e|2 = 15 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 20 mASpecificationsCollector to Base VoltageVCBO20 VCollector to Emitter Voltage VCEO 10 VEmitter to Base VoltageVEBO 1.5 VCollector CurrentIC 65 mATotal Power Dissipati...

product image

2SC4094 Picture
SeekIC No. : 004222727 Detail

2SC4094: Features: • NF = 1.2 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 7 mA• |S21e|2 = 15 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 20 mASpecificationsCollector to Base VoltageVCBO20 VCollector to Emitt...

floor Price/Ceiling Price

Part Number:
2SC4094
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/5

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• NF = 1.2 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 7 mA
• |S21e|2 = 15 dB TYP. @f = 1.0 GHz, VCE = 8 V, IC = 20 mA



Specifications

Collector to Base Voltage                    VCBO                20        V
Collector to Emitter Voltage                 VCEO                10        V
Emitter to Base Voltage                       VEBO               1.5        V
Collector Current                                     IC                65       mA
Total Power Dissipation                          PT               200      mW
Junction Temperature                              Tj               150         
Storage Temperature                           Tstg         -65 to +150 



Description

The 2SC4094 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Lownoise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This achieved by direct nitride passivated base surface process (DNP process) which is an NEC proprietary new fabrication technique.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Hardware, Fasteners, Accessories
Optoelectronics
RF and RFID
Memory Cards, Modules
Crystals and Oscillators
Audio Products
View more