Features: ` Adoption of MBIT process.` High DC current gain (hFE=800 to 3200).` Large current capacity (IC=0.7A).` Low collector-to-emitter saturation voltage (V CE(sat) 0.5V).` High VEBO (VEBO15V).Application· AF amplifier, various drivers.PinoutSpecifications Parameter Symbol Conditio...
2SC4204: Features: ` Adoption of MBIT process.` High DC current gain (hFE=800 to 3200).` Large current capacity (IC=0.7A).` Low collector-to-emitter saturation voltage (V CE(sat) 0.5V).` High VEBO (VEBO15V)....
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|
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
| Collector-to-Base Voltage |
VCBO |
30 |
V | |
| Collector-to-Emitter Voltage |
VCEO |
25 |
V | |
| Emitter-base voltage |
VEBO |
15 |
V | |
| Collector current |
IC |
0.7 |
A | |
| Collector current(Pulse) |
ICP |
1.5 |
A | |
| Collector Dissipation |
PC |
0.6 |
W | |
| Junction temperature |
Tj |
150 |
||
| Storage temperature |
Tstg |
55 to +150 |
| Absolute maximum ratings | |
|---|---|
| VCEO [V] | 25 |
| VEBO [V] | 15 |
| IC [A] | 0.7 |
| PC [W] | 0.6 |
| Electrical characteristics | |
|---|---|
| hFE min | 800 |
| hFE max | 3200 |
| VCE [V] | 5 |
| IC [mA] | 50 |
| VCE (sat) typ [V] | 0.15 |
| VCE (sat) max [V] | 0.5 |
| IC [mA] | 500 |
| IB [mA] | 10 |