Features: ` Adoption of MBIT process.` High DC current gain (hFE=800 to 3200).` Large current capacity (IC=0.7A).` Low collector-to-emitter saturation voltage (V CE(sat) 0.5V).` High VEBO (VEBO15V).Application· AF amplifier, various drivers.PinoutSpecifications Parameter Symbol Conditio...
2SC4204: Features: ` Adoption of MBIT process.` High DC current gain (hFE=800 to 3200).` Large current capacity (IC=0.7A).` Low collector-to-emitter saturation voltage (V CE(sat) 0.5V).` High VEBO (VEBO15V)....
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Parameter |
Symbol |
Conditions |
Ratings |
Unit |
Collector-to-Base Voltage |
VCBO |
30 |
V | |
Collector-to-Emitter Voltage |
VCEO |
25 |
V | |
Emitter-base voltage |
VEBO |
15 |
V | |
Collector current |
IC |
0.7 |
A | |
Collector current(Pulse) |
ICP |
1.5 |
A | |
Collector Dissipation |
PC |
0.6 |
W | |
Junction temperature |
Tj |
150 |
||
Storage temperature |
Tstg |
55 to +150 |
Absolute maximum ratings | |
---|---|
VCEO [V] | 25 |
VEBO [V] | 15 |
IC [A] | 0.7 |
PC [W] | 0.6 |
Electrical characteristics | |
---|---|
hFE min | 800 |
hFE max | 3200 |
VCE [V] | 5 |
IC [mA] | 50 |
VCE (sat) typ [V] | 0.15 |
VCE (sat) max [V] | 0.5 |
IC [mA] | 500 |
IB [mA] | 10 |