2SC4226-T1-A R25

The 2SC4226-T1-A R25 is designed as one kind of NPN silicon epitaxial planar transistor device that can be used in high frequency low noise amplifier applications. And this device has three points of features(1)Low noise; (2)High gain; (3)Power dissipation (PC=150 mW).

The absolute maximum ratings of the 2SC4226-T1-A R25 can be summarized as:(1)Collector-Base Voltage: 20 V;(2)Collector-Emitter Voltage: 12 V;(3)Emitter-Base Voltage: 3 V;(4)Collector Current -Continuous: 100 mA;(5)Collector Dissipation: 150 mW;(6)Junction and Storage Temperature: -65 to 150 .

The electrical characteristics of this device can be summarized as:(1)Collector-base breakdown voltage: 20 V;(2)Collector-emitter breakdown voltage: 12 V;(3)Emitter-base breakdown voltage: 3 V;(4)Collector cut-off current: 1.0 uA;(5)Emitter cut-off current: 1.0 A;(6)DC current gain: 40 to 250;(7)Feed back capacitance: 0.7 to 1.5 pF;(8)Transition frequency: 3.0 to 4.5 GHz;(9)Noise Figure: 1.2 to 2.5 dB. If you want to know more information about the 2SC4226-T1-A R25, please download the datasheet in www.seekic.com or www.chinaicmart.com .