PinoutDescriptionThe 2SC4226R25/R24 is designed as one kind of NPN silicon epitaxial planar transistor device that can be used as the high frequency low noise amplifier. And this device has three points fof features:(1)low noise; (2)high gain; (3)power dissipation (PC=150mW). The absolute maximum...
2SC4226R25/R24: PinoutDescriptionThe 2SC4226R25/R24 is designed as one kind of NPN silicon epitaxial planar transistor device that can be used as the high frequency low noise amplifier. And this device has three po...
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The 2SC4226R25/R24 is designed as one kind of NPN silicon epitaxial planar transistor device that can be used as the high frequency low noise amplifier. And this device has three points fof features:(1)low noise; (2)high gain; (3)power dissipation (PC=150mW).
The absolute maximum ratings of the 2SC4226R25/R24 can be summarized as:(1)Collector-Base Voltage: 20 V;(2)Collector-Emitter Voltage: 12 V;(3)Emitter-Base Voltage: 3 V;(4)Collector Current -Continuous: 100 mA;(5)Collector Dissipation: 150 mW;(6)Junction and Storage Temperature: -65 to 150 .
The electrical characteristics of this device can be summarized as:(1)Collector-base breakdown voltage: 20 V;(2)Collector-emitter breakdown voltage: 12 V;(3)Emitter-base breakdown voltage: 3 V;(4)Collector cut-off current: 1.0 A;(5)Emitter cut-off current: 1.0 A;(6)DC current gain: 40 to 250;(7)Feed back capacitance: 0.7 to 1.5 pF;(8)Transition frequency: 3.0 to 4.5 GHz;(9)Noise Figure: 1.2 to 2.5 dB. If you want to know more information about the 2SC4226R25/R24, please download the datasheet in www.seekic.com or www.chinaicmart.com .