2SC4270

PinoutSpecifications Absolute maximum ratings VCBO [V] 25 VCEO [V] 15 IC [mA] 50 PC [mW] 250 Electrical characteristics fT typ [GHz] 3 VCE [V] 10 IC [mA] 10 Cob typ [pF] 0.7 VCB [V] 10 NF typ [dB] 3 VCE [V] 10 IC [mA] 3 ...

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2SC4270 Picture
SeekIC No. : 004222864 Detail

2SC4270: PinoutSpecifications Absolute maximum ratings VCBO [V] 25 VCEO [V] 15 IC [mA] 50 PC [mW] 250 Electrical characteristics fT typ [GHz] 3 VCE [V] 1...

floor Price/Ceiling Price

Part Number:
2SC4270
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Description



Pinout






Specifications

Absolute maximum ratings
VCBO [V] 25
VCEO [V] 15
IC [mA] 50
PC [mW] 250
Electrical characteristics
fT typ [GHz] 3
VCE [V] 10
IC [mA] 10
Cob typ [pF] 0.7
VCB [V] 10
NF typ [dB] 3
VCE [V] 10
IC [mA] 3
f [GHz] 0.9
|S21e|² typ *min [dB] -
VCE [V] -
IC [mA] -
f [GHz] -
PG MAG typ [dB] 12
VCE [V] 10
IC [mA] 10
f [GHz] 0.9





Description

The 2SC4270 is a kind of NPN epitaxial planar silicon transistor. It is widely used in UHF converter, local oscillator applications.

There are some features of 2SC4270: (1)small noise figure: NF=3.0 dB typ (f=0.9 GHz); (2)high power gain: PG=12 dB typ (f=0.9 GHz); (3)high cutoff frequency: fT=3.0 GHz typ.

What comes next is the absolute maximum ratings of 2SC4270 at Ta=25: (1)collector to base voltage, VCBO: 25 V; (2)collector to emitter voltage, VCEO: 15 V; (3)emitter to base voltage, VEBO: 3 V; (4)collector current, IC: 50 mA; (5)base current, IB: 20 mA; (6)collector dissipation, PC: 250 mW; (7)junction temperature, Tj: 150; (8)storage temperature, Tstg: -55 to +150.

The following is the electrical characteristics of 2SC4270 at Ta=25: (1)collector cutoff current, ICBO: 0.1A max at VCB=20 V, IE=0; (2)emittor cutoff current, IEBO: 10A max at VEB=2 V, IC=0; (3)DC current gain, hFE: 40 min and 200 max at VCE=10 V, IC=5 mA; (4)gain-bandwidth product, fT: 1.5 GHz min and 3.0 GHz typ at VCE=10 V, IC=10 mA; (5)output capacitance, cob: 0.7 pF typ and 1.0 pF max at VCB=10 V, f=1 MHz; (6)reverse transfer capacitance, cre: 0.45 pF at VCB=10 V, f=1 MHz; (7)power gain, PG: 12 dB typ at VCE=10 V, IC=10 mA, f=0.9 GHz; (8)noise figure, NF: 3.0 dB typ at VCE=10 V, IC=3 mA, f=0.9 GHz.






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