PinoutSpecifications Absolute maximum ratings VCBO [V] 25 VCEO [V] 15 IC [mA] 50 PC [mW] 250 Electrical characteristics fT typ [GHz] 3 VCE [V] 10 IC [mA] 10 Cob typ [pF] 0.7 VCB [V] 10 NF typ [dB] 3 VCE [V] 10 IC [mA] 3 ...
2SC4270: PinoutSpecifications Absolute maximum ratings VCBO [V] 25 VCEO [V] 15 IC [mA] 50 PC [mW] 250 Electrical characteristics fT typ [GHz] 3 VCE [V] 1...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Absolute maximum ratings | |
---|---|
VCBO [V] | 25 |
VCEO [V] | 15 |
IC [mA] | 50 |
PC [mW] | 250 |
Electrical characteristics | |
---|---|
fT typ [GHz] | 3 |
VCE [V] | 10 |
IC [mA] | 10 |
Cob typ [pF] | 0.7 |
VCB [V] | 10 |
NF typ [dB] | 3 |
VCE [V] | 10 |
IC [mA] | 3 |
f [GHz] | 0.9 |
|S21e|² typ *min [dB] | - |
VCE [V] | - |
IC [mA] | - |
f [GHz] | - |
PG MAG typ [dB] | 12 |
VCE [V] | 10 |
IC [mA] | 10 |
f [GHz] | 0.9 |
The 2SC4270 is a kind of NPN epitaxial planar silicon transistor. It is widely used in UHF converter, local oscillator applications.
There are some features of 2SC4270: (1)small noise figure: NF=3.0 dB typ (f=0.9 GHz); (2)high power gain: PG=12 dB typ (f=0.9 GHz); (3)high cutoff frequency: fT=3.0 GHz typ.
What comes next is the absolute maximum ratings of 2SC4270 at Ta=25: (1)collector to base voltage, VCBO: 25 V; (2)collector to emitter voltage, VCEO: 15 V; (3)emitter to base voltage, VEBO: 3 V; (4)collector current, IC: 50 mA; (5)base current, IB: 20 mA; (6)collector dissipation, PC: 250 mW; (7)junction temperature, Tj: 150; (8)storage temperature, Tstg: -55 to +150.
The following is the electrical characteristics of 2SC4270 at Ta=25: (1)collector cutoff current, ICBO: 0.1A max at VCB=20 V, IE=0; (2)emittor cutoff current, IEBO: 10A max at VEB=2 V, IC=0; (3)DC current gain, hFE: 40 min and 200 max at VCE=10 V, IC=5 mA; (4)gain-bandwidth product, fT: 1.5 GHz min and 3.0 GHz typ at VCE=10 V, IC=10 mA; (5)output capacitance, cob: 0.7 pF typ and 1.0 pF max at VCB=10 V, f=1 MHz; (6)reverse transfer capacitance, cre: 0.45 pF at VCB=10 V, f=1 MHz; (7)power gain, PG: 12 dB typ at VCE=10 V, IC=10 mA, f=0.9 GHz; (8)noise figure, NF: 3.0 dB typ at VCE=10 V, IC=3 mA, f=0.9 GHz.