2SC4793

Series: -
Transistor Type: NPN
Resistor - Base (R1) (Ohms): -
Current - Collector Cutoff (Max): -
Resistor - Emitter Base (R2) (Ohms): -
Frequency - Transition: 100MHz
Mounting Type: Through Hole
Current - Collector (Ic) (Max): 1A
Power - Max: 2W
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Packaging: Tube
Manufacturer: Toshiba
Package / Case: TO-220-3 Full Pack
Voltage - Collector Emitter Breakdown (Max): 230V
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
Supplier Device Package: TO-220NIS


Features:

`High transition frequency
`Power amplifier applications
`Driver stage amplifier applications




Specifications

PARAMETER		SYMBOL	RATINGS	UNIT
Collector-Base Voltage		VCBO	230	V
Collector-Emitter Voltage		VCEO	230	V
Emitter-Base Voltage		VEBO	5	V
Collector Current		IC	2	A
Base Current		IB	0.1	A
Collector Power Dissipation	Ta=25	PC	2.0	W
	TC=25		20	W
Junction Temperature		TJ	+150
Storage Temperature Range		TSTG	-55 ~ +150

Parameters:

Technical/Catalog Information	2SC4793
Vendor	Toshiba
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	230V
Current - Collector (Ic) (Max)	1A
Power - Max	20W
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA, 5V
Vce Saturation (Max) @ Ib, Ic	1.5V @ 50mA, 500mA
Frequency - Transition	100MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	2-10R1A (TO-220 NIS)
Packaging	Tube
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2SC4793 2SC4793