2SC5000

The 2SC5000 is a kind of transistor. It is silicon NPN epitaxial type. It is designed for power amplifier applications. It features low collector saturation voltage (VCE(sat)=0.4 V max (IC=5 A)).

What comes next is about the absolute maximum ratings (Ta=25): (1)collector-base voltage, VCBO: 80 V; (2)collector-emitter voltage, VCEO: 50 V; (3)emitter-base voltage, VEBO: 7 V; (4)collector current, DC, IC: 10 A; (5)base current, IB: 1A; (6)collector power dissipation, PC: 25 W; (7)junction temperature, Tj: 150; (8)storage temperature range, Tstg: -55 to 150.

The following is about the electrical characteristics (Ta=25): (1)collector cutoff current, ICBO: 1.0A max at VCB=70 V, IE=0; (2)emitter cutoff current, IEBO: 1.0A max at VEB=7 V, IC=0; (3)collector-emitter breakdown voltage, V(BR)CEO: 50 V min at IC=1 mA, IB=0; (4)DC current gain, hFE: 120 min and 400 max at VCE=1 V, IC=1 A; (5)collector-emitter saturation voltage, VCE(sat): 0.19 V typ and 0.4 V max at IC=5 A, IB=0.25 A; (6)base-emitter saturation voltage, VBE(sat): 0.96 V typ and 1.4 V max IC=5 A, IB=0.25 A; (7)collector output capacitance, Cob: 90 pF typ at VCB=10 V, IE=0, f=1 MHz.