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2SC6042

Features: • High-speed switching: tf = 0.2 s (max) (IC = 0.3A)• High breakdown voltage: VCES = 800 V, VCEO = 375 VSpecifications SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 800 V VCEOVCES Collector to emitter voltage 800375 V VEBO Emitter to ba...

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2SC6042: Features: • High-speed switching: tf = 0.2 s (max) (IC = 0.3A)• High breakdown voltage: VCES = 800 V, VCEO = 375 VSpecifications SYMBOL PARAMETER RATING UNIT VCBO Collector...

2SC6042 Data Sheet

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Part Number:
2SC6042
Supply Ability:
5000

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Product Details

Description



Features:

• High-speed switching: tf = 0.2 s (max) (IC = 0.3A)
• High breakdown voltage: VCES = 800 V, VCEO = 375 V


Specifications

SYMBOL PARAMETER RATING UNIT
VCBO Collector to base voltage 800 V
VCEO
VCES		 Collector to emitter voltage 800
375		 V
VEBO Emitter to base voltage 8 V
IC Collector current DC 1.0 A
ICP Collector current (pulse) 2.0 A
IB Base current 0.5 A
PC Collector dissipationTa = 25 1.0
W
Tj Junction temperature 150
Tstg Storage temperaturerange -55 to +150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).




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