Transistors Bipolar (BJT) BIP NPN 2A 50V
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| Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 50 V |
| Emitter- Base Voltage VEBO : | 6 V | DC Collector/Base Gain hfe Min : | 200 mA |
| Packaging : | Bulk |
| SYMBOL | PARAMETER | RATING | UNIT |
| VCBO | Collector to base voltage | 80 | V |
| VCES | Collector to emitter voltage | 80 | V |
| VCEO | Collector-to-Emitter Voltage | 50 | V |
| VEBO | Emitter to base voltage | 6 | V |
| ICP | Collector Peak Current (Pulse) | 2 | A |
| IC | Collector current | 4 | A |
| IB | Base Current | 400 | mA |
| PC | Collector Dissipation | 1 |
W |
| Tj | Max. Operating Junction Temperature | 150 | |
| Tstg | Storage temperature | 55to~150 |