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2SC6061

Application・High-DC current gain: hFE = 120 to 300 (IC = 0.1 A)・Low-collector-emitter saturation: VCE (sat) = 0.14 V (max)・High-speed switching: tf = 0.2 s (typ)Specifications Characteristics Symbol Rating Unit Collector-base voltage VCBO 180 V Col...

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2SC6061: Application・High-DC current gain: hFE = 120 to 300 (IC = 0.1 A)・Low-collector-emitter saturation: VCE (sat) = 0.14 V (max)・High-speed switching: tf = 0.2 s (typ)Specifications ...

2SC6061 Data Sheet

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2SC6061
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Product Details

Description



Application

・High-DC current gain: hFE = 120 to 300 (IC = 0.1 A)
・Low-collector-emitter saturation: VCE (sat) = 0.14 V (max)
・High-speed switching: tf = 0.2 s (typ)


Specifications

Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
180
V
Collector-emitter voltage
VCEX
150
V
Collector-emitter voltage
VCEO
120
V
Emitter-base voltage
VEBO
7
V
Collector current(Note1) DC
IC
1.0
A
Pulse
ICP
2.0
A
Base current
IB
0.1
mA
Collector power
dissipation (Note 2)		 t = 10s
PC
1000
mW
DC
625
mW
Junction temperature
Tj
150
Storage temperature range
Tstg
−55 to 150

Note 1: Ensure that the channel temperature does not exceed 150

Note 2: Mounted on FR4 board (glass epoxy, 1.6mm thick, Cu area: 645 mm2)
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage  nd the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).




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