2SC6076

Features:

`Low collector saturation voltage: V<sub>CE (sat)</sub> = 0.5 V (max)(I<sub>C</sub> = 1A)
`High-speed switching: t_stg = 0.4 s (typ)


Specifications

Characteristic		Symbol	Rating	Unit
Collector-base voltage		VCBO	160	V
Collector-emitter voltage		VCEX	160	V
Collector-emitter voltage		VCEO	80	V
Emitter-base voltage		VEBO	9	V
Collector current	DC	IC	3	A
	Pulse	ICP	5	A
Base current		IB	1.5	A
Collector power dissipation	Tc = 25	PC	10	W
Junction temperature		Tj	150
Storage temperature		Tstg	-55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage
          and the significant change in temperature, etc.) may cause this product to decrease in the
          reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage,
          etc.) are within the absolute maximum ratings.

          Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
          ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability
          test report and estimated failure rate, etc).