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2SC6080

Features: • Adoption of MBIT process.• Large current capacitance.• Low collector-to-emitter saturation voltage.• High-speed switching.Application• High-speed switching applications (switching regulator, driver circuit).Specifications SYMBOL PARAMETER Conditions...

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SeekIC No. : 004223777 Detail

2SC6080: Features: • Adoption of MBIT process.• Large current capacitance.• Low collector-to-emitter saturation voltage.• High-speed switching.Application• High-speed switching ...

2SC6080 Data Sheet

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Part Number:
2SC6080
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Adoption of MBIT process.
• Large current capacitance.
• Low collector-to-emitter saturation voltage.
• High-speed switching.


Application

• High-speed switching applications (switching regulator, driver circuit).


Specifications

SYMBOL PARAMETER Conditions RATING UNIT
VCBO Collector to base voltage   60 V
VCES Collector to emitter voltage   60 V
VCEO Collector-to-Emitter Voltage   50 V
VEBO Emitter to base voltage   6 V
ICP Collector Current (Pulse) PW£10ms, duty cycle£10% 15 A
IC Collector current   13 A
IB Base Current   2 A
PC Collector dissipation Tc=25°C 2
25		 W
Tj Junction temperature   150
Tstg Storage temperature   55to~150



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