2SC6081

Series: -
Transistor Type: NPN
Resistor - Base (R1) (Ohms): -
Current - Collector Cutoff (Max): -
Resistor - Emitter Base (R2) (Ohms): -
Frequency - Transition: 250MHz
Voltage - Collector Emitter Breakdown (Max): 50V
Mounting Type: Through Hole
Power - Max: 2W
Current - Collector (Ic) (Max): 5A
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Manufacturer: SANYO Semiconductor (U.S.A) Corporation
Supplier Device Package: TO-220ML
Vce Saturation (Max) @ Ib, Ic: 400mV @ 125mA, 2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 125mA, 2V


Features:

• Adoption of MBIT process.
• Large current capacitance.
• Low collector-to-emitter saturation voltage.
• High-speed switching.


Application

• High-speed switching applications (switching regulator, driver circuit).


Specifications

SYMBOL	PARAMETER	Conditions	RATING	UNIT
VCBO	Collector to base voltage		60	V
VCES	Collector to emitter voltage		60	V
VCEO	Collector-to-Emitter Voltage		50	V
VEBO	Emitter to base voltage		6	V
ICP	Collector Current (Pulse)	PW10ms, duty cycle10%	8	A
IC	Collector current		5	A
IB	Base Current		1	A
PC	Collector dissipation	Tc=25°C	2 20	W
Tj	Junction temperature		150
Tstg	Storage temperature		55to~150