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2SC6087

ApplicationLow collector emitter saturation voltage : V CE (sat) = 0.5 V (max)(IC = 1A)High-speed switching: tstg = 0.4 s (typ)Specifications PARAMETER SYMBOL Rating UNIT Junction temperature Tj +150 Storage temperature Tstg -55~150 Collector to base vo...

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2SC6087: ApplicationLow collector emitter saturation voltage : V CE (sat) = 0.5 V (max)(IC = 1A)High-speed switching: tstg = 0.4 s (typ)Specifications PARAMETER SYMBOL Rating UNIT Junction...

2SC6087 Data Sheet

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Part Number:
2SC6087
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5000

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Product Details

Description



Application

Low collector emitter saturation voltage
                                                      : V CE (sat) = 0.5 V (max)(IC = 1A)
High-speed switching: tstg = 0.4 s (typ)


Specifications

PARAMETER
SYMBOL
Rating
UNIT
Junction temperature
Tj
+150
Storage temperature
Tstg
-55~150
Collector to base voltage
VCBO
-40
V
Collector to emitter voltage
VCEO
-20
V
Emitter to base voltage
VEBO
-5
V
Collector current
IC
-500
mA
Emitter to Base Voltage
PD
225
mW
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. 

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).


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