Features: • High speed.• High breakdown voltage (VCBO=1500V).• High reliability (Adoption of HVP process).• Adoption of MBIT process.• On-chip damper diode.PinoutSpecifications Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 150...
2SC6118LS: Features: • High speed.• High breakdown voltage (VCBO=1500V).• High reliability (Adoption of HVP process).• Adoption of MBIT process.• On-chip damper diode.PinoutSpecif...
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| Parameter | Symbol | Conditions | Ratings | Unit |
| Collector-to-Base Voltage | VCBO | 1500 | V | |
| Collector-to-Emitter Voltage | VCEO | 800 | V | |
| Emitter-to-Base Voltage | VEBO | 6 | V | |
| Collector Current | IC | 8 | A | |
| Collector Current (Pulse) | ICP | 20 | A | |
| Collector Dissipation | PC | 2.0 | W | |
| Tc=25°C | 35 | W | ||
| Junction Temperature | Tj | 150 | ||
| Storage Temperature | Tstg | -55 to +150 |
| Absolute maximum ratings | |
|---|---|
| VCBO [V] | 1500 |
| VCEO [V] | 800 |
| IC [A] | 8 |
| PC[W] | 35
Tc=25°C |
| Electrical characteristics | |
|---|---|
| hFE min | 5.3 |
| hFE max | 7.5 |
| VCE [V] | 5 |
| IC [A] | 5 |
| VCE (sat) max [V] | 2 |
| IC [A] | 4.5 |
| IB [A] | 0.9 |
| tf max [µs] | 0.2 |