2SC732TM

The 2SC732TM is a kind of transistor. It is silicon NPN epitaxial type (PCT process). It is intended for low noise audio amplifier applications. There are some features as follows: (1)excellent hFE linearity: hFE (IC=0.1 mA)/hFE (IC=2 mA)=0.95 (typ); (2)high breakdown voltage: VCEO=50 V; (3) low noise: NF(1)=0.5 dB (typ) (f=100 Hz); NF(2)=0.2 dB (typ) (f=1 kHz).

What comes next is the absolute maximum ratings of 2SC732TM (Ta=25): (1)collector-base voltage, VCBO: 60 V; (2)collector-emitter voltage, VCEO: 50 V; (3)emitter-base voltage, VEBO: 5 V; (4)collector current, IC: 150 mA; (5)base current, IB: 30 mA; (6)collector power dissipation, PC: 400 mW; (7)junction temperature, Tj: 125; (8)storage temperature range, Tstg: -55 to 125.

The following is the electrical characteristics of 2SC732TM(Ta=25): (1)collector cutoff current, ICBO: 0.1A max at VCB=60 V, IE=0; (2)emitter cutoff current, IEBO: 0.1A max at VEB=5 V, IC=0; (3)transition frequency, fT: 150 MHz typ at VCE=6 V, IC=1 mA; (4)DC current gain, hFE: 200 min and 700 max at VCE=6 V, IC=2 mA; (5)collector-emitter saturation voltage, VCE(sat): 0.3 V max at IC=10 mA, IB=1 mA; (6)base-emitter voltage, VBE: 0.65 V typ at IC=2 mA, VCE=6 V; (7)collector output capacitance, Cob: 2.0 pF typ at VCB=10 V, IE=0, f=1 MHz; (8)noise figure, NF(1): 0.5 dB typ and 6 dB max at VCE=6 V, IC=0.1 mA, f=1 kHz, RG=10 k; (9)noise figure, NF(2): 0.2 dB typ and 3 dB max at VCE=6 V, IC=0.1 mA, f=1 kHz, RG=10 k.