2SC941TM

DescriptionThe 2SC941TM is a kind of transistor. It is silicon NPN epitaxial type (PCT process). It is intended for high frequency amplifier applications, AM high frequency amplifier applications and AM frequency converter applications. Besides, it features low noise figure which is 3.5 dB max (f=...

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SeekIC No. : 004223821 Detail

2SC941TM: DescriptionThe 2SC941TM is a kind of transistor. It is silicon NPN epitaxial type (PCT process). It is intended for high frequency amplifier applications, AM high frequency amplifier applications an...

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Part Number:
2SC941TM
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Description



Description

The 2SC941TM is a kind of transistor. It is silicon NPN epitaxial type (PCT process). It is intended for high frequency amplifier applications, AM high frequency amplifier applications and AM frequency converter applications. Besides, it features low noise figure which is 3.5 dB max (f=1 MHz).

What comes next is the absolute maximum ratings of 2SC941TM(Ta=25): (1)collector-base voltage, VCBO: 35 V; (2)collector-emitter voltage, VCEO: 30 V; (3)emitter-base voltage, VEBO: 4 V; (4)collector current, IC: 100 mA; (5)base current, IB: 20 mA; (6)collector power dissipation, PC: 400 mW; (7)junction temperature, Tj: 125; (8)storage temperature range, Tstg: -55 to 125.

The following is the electrical characteristics of 2SC941TM(Ta=25): (1)collector cutoff current, ICBO: 0.1A max at VCB=20 V, IE=0; (2)emitter cutoff current, IEBO: 1.0A max at VEB=2 V, IC=0; (3)transition frequency, fT: 80 MHz min and 150 MHz typ at VCE=10 V, IC=2 mA; (4)DC current gain, hFE: 40 min and 240 max at VCE=12 V, IC=2 mA; (5)collector-emitter saturation voltage, VCE(sat): 0.4 V max at IC=10 mA, IB=1 mA; (6)base-emitter saturation voltage, VBE(sat): 1.0 V max at IC=10 mA, IB=1 mA; (7)reverse transfer capacitance, Cre: 2.2 pF typ and 3.0 max at VCE=10 V, IE=-1 mA, f=30 MHz; (8)noise figure, NF: 2.0 dB typ and 3.5 dB max at VCE=10 V, IE=-1 mA, f=1 kHz, RG=50.




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