2SC945LT1

The 2SC945LT1 is designed as the NPN epitaxial planar silicon transistor that has two points of features:(1)high voltage 50 V min.; (2)excellent hFE linearity: 0.92 typ..

The absolute maximum ratings of the 2SC945LT1 can be summarized as:(1)collector-base voltage: 60 V;(2)collector-emitter voltage: 50 V;(3)emitter-base voltage: 5.0 V;(4)collector current: 0.1 A;(5)junction temperature: 125 ;(6)storage temperature: -55 to +125 ;(7)Collector power dissipation: 0.25 W.

The electrical characteristics of this device can be summarized as:(1)Collector cutoff current: 100 nA;(2)Emitter cutoff current: 100 nA;(3)DC current gain: 50 to 600;(4)Collector saturation voltage: 0.15 to 0.30 V;(5)Base saturation voltage: 0.86 to 1.0 V;(6)Base-emitter voltage: 550 to 650 mV;(7)Gain bandwidth product: 150 to 450 MHz;(8)Output capacitance: 3.0 to 4.0 pF. If you want to know more information such as the electrical characteristics about the 2SC945LT1, please download the datasheet in www.seekic.com or www.chinaicmart.com.