2SC982TM

The 2SC982TM is a silicon npn epitaxial planar type(pct process)(darlington).Feature of the 2SC982TM is:high dc current gain:hFE(1)=5000(Min.)(Ic=10mA);hFE(2)=10000(Min.)(Ic=100mA).

The absolute maximum ratings of the 2SC982TM can be summarized as:(1)collector-base voltage:40V; (2)collector-emitter voltage:40V; (3)emitter-base voltage:10V; (4)collector current dc:300mA; (5)collector current pulsed:500mA; (6)base current:10mA; (7)collector power dissipation:400mW; (8)junction temperature:125; (9)storage temperature:-55~125.

The electrical characteristics at TA=25°C of the 2SC982TM can be summarized as:(1)collector cut-off current:0.1A; (2)emitter cut-off current:0.1A; (3)dc current gain:5000(hFE(1));10000(hFE(2)); (4)collector-emitter saruration voltage:1.3V; (5)base-emitter voltage:1.6V.If you want to know more information such as the electrical characteristics ,please download the datasheet in www.seekdatasheet.com .