2SD1007-T1

The 2SD1007-T1 is one member of the 2SD1007 family which is designed as the NPN epitaxial planar silicon transistor that has one point of feature:High collector to emitter voltage is VCEO > 120 V. The absolute maximum ratings of the 2SD1007-T1 can be summarized as:(1)collector-base voltage: 120 V;(2)collector-emitter voltage: 120 V;(3)emitter-base voltage: 5 V;(4)collector current: 0.7 or 1.2 A;(5)junction temperature: 150 ;(6)storage temperature: -55 to +150 ;(7)Collector power dissipation: 2.0 W.

The electrical characteristics of this device can be summarized as:(1)Collector cutoff current: 100 nA;(2)Emitter cutoff current: 100 nA;(3)DC current gain: 45 to 400;(4)Collector saturation voltage: 0.3 to 0.6 V;(5)Base saturation voltage: 0.90 to 1.5 V;(6)Base-emitter voltage: 650 to 750 mV;(7)Gain bandwidth product: 90 MHz;(8)Output capacitance: 10 pF. If you want to know more information such as the electrical characteristics about the 2SD1007-T1, please download the datasheet in www.seekic.com or www.chinaicmart.com.