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2SD1140

Features: ·High DC current gain: hFE= 4000 (min) (VCE = 2 V, IC = 150 mA)·CE C Low saturation voltage: VCE(sat)= 1.5 V (max) (IC= 1 A, IB= 1 mA)Specifications Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 30 ...

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2SD1140: Features: ·High DC current gain: hFE= 4000 (min) (VCE = 2 V, IC = 150 mA)·CE C Low saturation voltage: VCE(sat)= 1.5 V (max) (IC= 1 A, IB= 1 mA)Specifications Item Symbol Ratings Uni...

2SD1140 Data Sheet

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Part Number:
2SD1140
Supply Ability:
5000

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Product Details

Description



Features:

·High DC current gain: hFE= 4000 (min) (VCE  = 2 V, IC = 150 mA)  
·CE C  Low saturation voltage: VCE (sat) = 1.5 V (max) (IC= 1 A, IB= 1 mA)


Specifications

Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
30
V
Collector to emitter voltage
VCEO
30
V
Emitter to base voltage
VEBO
10
V
Collector current
IC
1.5
mA
Base current
IB
50
mA
Collector power dissipation
PC
900
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150


Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and invidual reliability data (i.e. reliability test report and estimated failure rate, etc).




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