DescriptionThe 2SD1222 is a transistor,silicon npn epitaxial type(pct process)(darlington). Features of the 2SD1222 are:(1)high dc current gain:hFE(1)=2000(Min.); (2)low saturation voltage:Vce(sat)=1.5V(Max); (3)complementary to 2SB907. The absolute maximum ratings of the 2SD1222 can be summariz...
2SD1222: DescriptionThe 2SD1222 is a transistor,silicon npn epitaxial type(pct process)(darlington). Features of the 2SD1222 are:(1)high dc current gain:hFE(1)=2000(Min.); (2)low saturation voltage:Vce(sat)...
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The 2SD1222 is a transistor,silicon npn epitaxial type(pct process)(darlington).
Features of the 2SD1222 are:(1)high dc current gain:hFE(1)=2000(Min.); (2)low saturation voltage:Vce(sat)=1.5V(Max); (3)complementary to 2SB907.
The absolute maximum ratings of the 2SD1222 can be summarized as:(1)collector-base voltage:60V; (2)collector-emitter voltage:40V; (3)emitter-base voltage:5V; (4)collector current:3A; (5)base current:0.3A; (6)collector power dissipation:Ta=25(1.0W);Tc=25(15W); (7)junction temperature:150; (8)storage temperature range:-55~150.If you want to know more information such as the electrical characteristics about the BF904, please download the datasheet in www.seekic.com or www.chinaicmart.com.