Purchase 2SD1224, In-stock 2SD1224 From SeekIC.
MFG:Other Category:Other
Part Number: 2SD1224
Category: Other
MFG: Other
Description: The 2SD1224 is a transistor,silicon npn epitaxial type(pct process)(darlington).
Features of the 2S...
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2SD1224
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DataSheet
General Description
2SD1224 General Description
The 2SD1224 is a transistor,silicon npn epitaxial type(pct process)(darlington).
Features of the 2SD1224 are:(1)high dc current gain:hFE(1)=4000(Min.); (2)low saturation voltage:Vce(sat)=1.5V(Max).
The absolute maximum ratings of the 2SD1224 can be summarized as:(1)collector-base voltage:30V; (2)collector-emitter voltage:30V; (3)emitter-base voltage:10V; (4)collector current:1.5A; (5)base current:0.15A; (6)collector power dissipation:Ta=25(1.0W);Tc=25(10W); (7)junction temperature:150; (8)storage temperature range:-55~150.If you want to know more information such as the electrical characteristics about the BF904, please download the datasheet in www.seekic.com or www.chinaicmart.com.
2SD1224
PDF/DataSheet Download
- Datasheet: 2SD1224
- File Size: 180048 KB
- Manufacturer: TOSHIBA [Toshiba Semiconductor]
- Click here to Download
- ·2SD0592
- Transistor
- 73120 KB
- ·2SD0592A
- PANASONIC [Panasonic Semiconductor]
- For Low-Frequency Output Amplification
- 80056 KB
- ·2SD0601
- PANASONIC [Panasonic Semiconductor]
- Silicon NPN epitaxial planer type
- 39707 KB
- ·2SD0601A
- PANASONIC [Panasonic Semiconductor]
- Silicon NPN epitaxial planer type
- 39707 KB
- ·2SD0601AR
- Matsushita
- TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 100MA I(C) | SOT-346
- 66818 KB
- ·2SD0602
- PANASONIC [Panasonic Semiconductor]
- Silicon NPN epitaxial planer type
- 62288 KB
- ·2SD0602A
- PANASONIC [Panasonic Semiconductor]
- Silicon NPN epitaxial planer type
- 62288 KB
- ·2SD0638
- PANASONIC [Panasonic Semiconductor]
- For Medium-Power General Amplification
- 74862 KB
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The 2SD1223 is a transistor,silicon npn epitaxial type(pct process)(darlington). Features of the 2SD1223 are:(1)high dc current gain:hFE(1)=2000(Min.); (2)low saturation voltage:Vce(sat)=1.5V(Max); (3)complementary to 2SB908. The absolute maximum ratings o...
2SD1222
The 2SD1222 is a transistor,silicon npn epitaxial type(pct process)(darlington). Features of the 2SD1222 are:(1)high dc current gain:hFE(1)=2000(Min.); (2)low saturation voltage:Vce(sat)=1.5V(Max); (3)complementary to 2SB907. The absolute maximum ratings o...
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2SD1221
The 2SD1221 is a transistor,silicon npn triple diffused type(pct process). Features of the 2SD1221 are:(1)low collector saturation voltage;Vce(sat)=0.4V(typ.); (2)high power dissipation:pc=20W; (3)complementary to 2SB906. The absolute maximum ratings of th...
2SD1220-Y(T6L1,NQ)
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