2SD1312

The 2SD1312 is designed for use in driver and output stages of audio frequency amplifiers.Features of the 2SD1312 are :(1)high total power dissipation and high breakdown voltage:1.0Wat 25 ambient temperature/VCEO=80V; (2)cokmplementary to the NEC 2SB984 PNP transistor.

The absolute maximum ratings of the 2SD1312 can be summarized as:(1)storage temperature:-55~150; (2)junction temperature:150 ; (3)total power dissipation:1.0W; (4)collector to base voltage:120V; (5)collector to emitter voltage:80V; (6)emitter to base voltage:5.0V; (7)collector current (DC):1.0A; (8)collector current (pulse):2.0A.

The electrical characteristics at TA=25°C of the 2SD1312 can be summarized as:(1)dc current gain(hFE1):135~600; (2)dc currentgain(hFE2):75; (3)gain bandwidth product:50MHz; (4)output capacitance:30pF; (5)collector cutpff current:100nA; (6)emitter cutoff current:100nA; (7)base to emitter voltage:550~650mV; (8)collector saturation voltage:0.5V; (9)base saturationvoltage:1.2V.If you want to know more information such as the electrical characteristics ,please download the datasheet in www.seekdatasheet.com .