2SD1407A

The 2SD1407A is designed as toshiba transistor silicon triple diffused type for power amplifier applications.

2SD1407A has three features. (1)High breakdown voltage which would be 100V. (2)Low collector saturation voltage which would be 2.0V max. (3)Complementary to 2SB1016A. Those are all the main features.

Some absolute maximum ratings of 2SD1407A have been concluded into several points as follow. (1)Its collector to base voltage would be 100V. (2)Its collector to emitter voltage would be 100V. (3)Its emitter to base voltage would be 5V. (4)Its collector current would be 5A. (5)Its base current would be 0.5A. (6)Its collector power dissipation would be 30W. (7)Its junction temperature would be 150°C. (8)Its storage temperature range would be from -55°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of 2SD1407A are concluded as follow. (1)Its collector cutoff current would be max 100uA. (2)Its emitter cutoff current would be max 1mA. (3)Its collector to emitter breakdown voltage would be min 100V. (4)Its DC current gain would be min 40 and max 240 with conditions of Vce=5V and Ic=1A and it would be min 20 with conditions of Vce=5V and Ic=4A. (5)Its collector to emitter saturation voltage would be max 2.0V. (6)Its base to emitter saturation voltage would be max 1.5V. (7)Its transition frequency would be typ 12MHz. (8)Its collector output capacitance would be typ 100pF.

It should be noted that the information about 2SD1407A contained herein is presented only as a guide for the applications of toshiba products. No responsibility is assumed by toshiba sorporation for any infringements of implication or otherwise under any intellectual property or other rights of toshiba corporation or others. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!