2SD1628-F

The 2SD1628-F is one member of the 2SD1628 family which is designed as the NPN epitaxial planar silicon transistor that has four points of features:(1)Low saturation voltage; (2)High hFE; (3)Large current capacity; (4)Very small size making it easy to provide highdensity, small-sized hybrid IC. And the structure of this device is Epitaxial planar type and NPN silicon transistor.

The absolute maximum ratings of the 2SD1628-F can be summarized as:(1)collector-base voltage: 60 V;(2)collector-emitter voltage: 20 V;(3)emitter-base voltage: 6 V;(4)collector current: 5 or 8 A;(5)junction temperature: 150 ;(6)storage temperature: -55 to +150 ;(7)Collector power dissipation: 1.5 W.

The electrical characteristics of 2SD1628-F can be summarized as:(1)Collector cutoff current: 100 nA;(2)Emitter cutoff current: 100 nA;(3)DC current gain: 120 to 560;(4)Gain bandwidth product: 120 MHz;(5)Output capacitance: 45 pF;(6)collector-emitter saturation voltage: 0.5 V;(7)Base-emitter saturation voltage: 1.5 V;(8)Collector-base breakdown voltage: 60 V;(9)Collector-emitter breakdown voltage: 20 V. If you want to know more information such as the electrical characteristics about the 2SD1628-F, please download the datasheet in www.seekic.com or www.chinaicmart.com.