2SD1631

The 2SD1631 is a kind of transistor. It is silicon NPN epitaxial type (PCT process) (darlington). It is intended for micro motor drive, hammer drive applications, switching applications and power amplifier applications. There are some features as follows: (1)high DC current gain: hFE=4000 (min) (VCE=2 V, IC=150 mA); (2)low saturation voltage: VCE(sat)=1.5 V (max) (IC=1 A, IB=1 mA).

What comes next is the absolute maximum ratings of 2SD1631(Ta=25): (1)collector-base voltage, VCBO: 30 V; (2)collector-emitter voltage, VCEO: 30 V; (3)emitter-base voltage, VEBO: 10 V; (4)collector current, IC: 1.5 A; (5)base current, IB: 50 mA; (6)collector power dissipation, PC: 1000 mW at Tc=25; (7)junction temperature, Tj: 150; (8)storage temperature range, Tstg: -55 to 150.

The following is the electrical characteristics of 2SD1631(Ta=25): (1)collector cutoff current, ICBO: 10A max at VCB=30 V, IE=0; (2)emitter cutoff current, IEBO: 10A max at VEB=10 V, IC=0; (3)collector-emitter breakdown voltage, V(BR)CEO: 30 V min at IC=10 mA, IB=0; (4)DC current gain, hFE: 4000 min at VCE=2 V, IC=150 mA; (5)collector-emitter saturation voltage, VCE(sat): 1.5 V max at IC=1 A, IB=1 mA; (6)base-emitter saturation voltage, VBE(sat): 2.2 V max at IC=1 A, IB=1 mA.