Application·Low frequency power amplificationSpecifications SYMBOL PARAMETER CONDITIONS RATING UNIT VCBO Collector to base voltage Open emitter 80 V VCEO Collector to emitter voltage Open base 80 V VEBO Emitter to base voltage Open collector 7 V IC Collector curre...
2SD1933: Application·Low frequency power amplificationSpecifications SYMBOL PARAMETER CONDITIONS RATING UNIT VCBO Collector to base voltage Open emitter 80 V VCEO Collector to emitter vol...
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SYMBOL | PARAMETER | CONDITIONS | RATING | UNIT |
VCBO | Collector to base voltage | Open emitter | 80 | V |
VCEO | Collector to emitter voltage | Open base | 80 | V |
VEBO | Emitter to base voltage | Open collector | 7 | V |
IC | Collector current | 4 | A | |
ICM | Collector current-peak | 6 | A | |
PC | Collector power dissipation | TC=25 Ta=25 |
30 2 |
W |
Tj | Junction temperature | 150 | ||
Tstg | Storage temperaturerange | -55 to +150 |
The 2SD1933 features:
·With TO-220Fa package
·DARLINGTON
·Complement to type 2SB1342
·High DC current gain