2SD1947A

The 2SD1947A is designed as toshiba transistor silicon NPN epitaxial type for lamp solenoid drive applications and high current switching applications.

It has two features. (1)It has low saturation voltage which would be max 0.3V at Ic=5A. (2)It has high DC current gain which would be from 500 to 1500 at Ic=1A. Those are all the main features.

Some absolute maximum ratings have been concluded into several points as follow. (1)Its collector to base voltage would be 100V. (2)Its collector to emitter voltage would be 100V. (3)Its emitter to base voltage would be 7V. (4)Its collector current would be 10A for DC and would be 15A for pulse. (5)Its base current would be 2A. (6)Its collector power dissipation would be 2.0W at Ta=25°C and it would be 40W at Tc=25°C. (7)Its junction temperature would be 150°C. (8)Its storage temperature range would be from -55°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics are concluded as follow. (1)Its collector cutoff current would be max 10uA. (2)Its emitter cutoff current would be max 10uA. (3)Its collector to emitter breakdown voltage would be min 100V. (4)Its DC current gain would be min 500 and max 1500 with conditions of Vce=1V and Ic=1A and it would be min 150 with conditions of Vce=1V and Ic=5A. (5)Its collector to emitter saturation voltage would be max 0.3V. (6)Its base to emitter saturation voltage would be max 1.2V. (7)Its collector output capacitance would be typ 160pF. (8)Its switching time would be typ 0.5us for turn-on time and would be typ 6.0us for storage time and would be typ 1.0us for fall time.

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