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Features: · Low saturation voltage.· Contains diode between collector and emitter.· Contains bias resistance between collector and emitter.· Large current capacity.· Small-sized package making it easy to provide highdensity, small-sized hybrid ICs.PinoutSpecifications Absolute maximum...

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2SD1998: Features: · Low saturation voltage.· Contains diode between collector and emitter.· Contains bias resistance between collector and emitter.· Large current capacity.· Small-sized package making it ea...

2SD1998 Data Sheet

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Part Number:: 2SD1998
Supply Ability:: 5000

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Product Details

Description

Features:

· Low saturation voltage.
· Contains diode between collector and emitter.
· Contains bias resistance between collector and emitter.
· Large current capacity.
· Small-sized package making it easy to provide highdensity, small-sized hybrid ICs.

Pinout

Specifications

Absolute maximum ratings
VCEO [V]	30
IC [A]	3
PC [W]	1.5 When mounted on ceramic substrate (250mm²*0.8mm) 1unit

Electrical characteristics
hFE min	70
hFE max	-
VCE [V]	2
IC [A]	0.5
VCE (sat) typ [V]	0.2
VCE (sat) max [V]	0.5
IC [A]	2
IB [mA]	100

Parameter	Symbol	Conditions	Ratings	Unit
Collector-to-Base Voltage	V_CBO		()40	V
Collector-to-Emitter Voltage	V_CEO		()30	V
Emitter-to-Base Voltage	V_EBO		()6	V
Collector Current	I_C		()3	A
Collector Current (Pulse)	I_CP		()5	A
Collector Dissipation	P_C	Mounted on ceramic board (250mm²X0.8mm)	1.5	mW
Junction Temperature	Tj		150	°C
Storage Temperature	Tstg		55 to +150	°C

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2SD1998

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