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2SD1998

Features: · Low saturation voltage.· Contains diode between collector and emitter.· Contains bias resistance between collector and emitter.· Large current capacity.· Small-sized package making it easy to provide highdensity, small-sized hybrid ICs.PinoutSpecifications Absolute maximum...

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2SD1998: Features: · Low saturation voltage.· Contains diode between collector and emitter.· Contains bias resistance between collector and emitter.· Large current capacity.· Small-sized package making it ea...

2SD1998 Data Sheet

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Part Number:
2SD1998
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Low saturation voltage.
· Contains diode between collector and emitter.
· Contains bias resistance between collector and emitter.
· Large current capacity.
· Small-sized package making it easy to provide highdensity, small-sized hybrid ICs.




Pinout






Specifications

Absolute maximum ratings
VCEO [V] 30
IC [A] 3
PC [W] 1.5
When mounted on ceramic substrate (250mm²*0.8mm) 1unit
Electrical characteristics
hFE min 70
hFE max -
VCE [V] 2
IC [A] 0.5
VCE (sat) typ [V] 0.2
VCE (sat) max [V] 0.5
IC [A] 2
IB [mA] 100


Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
()40
V
Collector-to-Emitter Voltage
VCEO
()30
V
Emitter-to-Base Voltage
VEBO
()6
V
Collector Current
IC
()3
A
Collector Current (Pulse)
ICP
()5
A
Collector Dissipation
PC
 Mounted on ceramic board (250mm2X0.8mm)
1.5
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
55 to +150
°C





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