2SD2018

Series: -
Resistor - Base (R1) (Ohms): -
Current - Collector Cutoff (Max): -
Resistor - Emitter Base (R2) (Ohms): -
Voltage - Collector Emitter Breakdown (Max): 60V
Frequency - Transition: -
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Manufacturer: Panasonic Electronic Components - Semiconductor Products
Current - Collector (Ic) (Max): 1A
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Power - Max: 5W
Supplier Device Package: TO-126B-A1
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 6500 @ 1A, 10V


Features:

• High forward current transfer ratio h_FE
• Built-in 60 V Zener diode between base to collector
• Darlington connection


Specifications

Parameter		Symbol	Rating	Unit
Collector to base voltage		VCBO	+25 60         −10	V
Collector to emitter voltage		VCEO	+25 60           −10	V
Emitter to base voltage		VEBO	5	V
Collector current		IC	1	A
Peak collector current		ICP	1	A
Collector power dissipation	TC = 25	PC	1.2	W
	Ta = 25		5.0
Junction temperature		Tj	150
Storage temperature		Tstg	−55 to +125

Note) * With a 100 * 100 * 2 mm Al heat sink


Parameters:

Technical/Catalog Information	2SD2018
Vendor	Panasonic - SSG
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	1A
Power - Max	5W
DC Current Gain (hFE) (Min) @ Ic, Vce	6500 @ 1A, 10V
Vce Saturation (Max) @ Ib, Ic	1.8V @ 1mA, 1A
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-126B-A1
Packaging	Bulk
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2SD2018 2SD2018