2SD2108

      The 2SD2108 is a kind of silicon NPN triple diffused low frequency power amplifier.
      The following is the maximum ratings of 2SD2108 at Ta=25.The collector-base voltage (V_CBO) is 80 V.The collector-emitter voltage (V_CEO) is 80 V.The emitter-base voltage (V_EBO) is 7 V.The collector current (I_C) is 8 A.The collector peak current (I_C(peak)) is 12 A.The collector power dissipation (P_C) is 2 W and 25 W at T_C=25.The junction temperature is 150.The storage temperature is (T_stg) from -55 to +150.The C to E diode forward current (I_D) is 8 A at T_C=25.
      What comes next is the electrical characteristics of 2SD2108 at Ta=25.The minimum collector to base breakdown voltage (V_(BR)CBO) is 80 V at I_C=0.1 mA,I_E=0.The minimum collector to emitter breakdown voltage (V_(BR)EBO) is 7 V at I_C=25 mA,R_BE=.The minimum emitter to base breakdown voltage (V(BR)CEO) is 80 V at IE=50 mA,IC=0.The maximum collector cutoff current (I_CBO) is 10 A at V_CB=65 V and I_E=0.The maximum collector cutoff current (I_CEO) is 10 A at V_CE=65 V and R_BE=.Then is about the DC current transfer ratio (h_FE).The minimum h_FE is 1000 at V_CE=3 V and I_C= 4 mA,the maximum is 20000 mA at Ta=25.The maximum collector to emitter saturation voltage (V_CE(sat)1) is 1.5 V at I_C=4 A,I_R=8 mA,Ta=25 and the maximum V_CE(sat)2 is 3.0 V at I_C=8 A,I_R=80 mA,Ta=25.
the maximum base to emitter saturation voltage (V_BE(sat)1) is 2.0 V at I_C=4 A,IB=8 mA,Ta=25 and the maximum V_BE(sat)2 is 3.5 V at I_C=8 A,I_B=80 mA,Ta=25.The maximum C to E diode forward voltage (V_D) is 3.0 V at I_D=8 A,Ta=25.