2SD2114KT146V

Transistors Bipolar (BJT) NPN 20V 0.5A

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SeekIC No. : 00206623 Detail

2SD2114KT146V: Transistors Bipolar (BJT) NPN 20V 0.5A

floor Price/Ceiling Price

US $ .07~.26 / Piece | Get Latest Price
Part Number:
2SD2114KT146V
Mfg:
ROHM Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.26
  • $.17
  • $.12
  • $.07
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/17

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 20 V
Emitter- Base Voltage VEBO : 12 V Maximum DC Collector Current : 1 A
DC Collector/Base Gain hfe Min : 820 Configuration : Single
Maximum Operating Frequency : 350 MHz Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SC-59
Packaging : Reel    

Description

Transistor Polarity : NPN
Collector- Emitter Voltage VCEO Max : 20 V
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : SC-59
Maximum DC Collector Current : 1 A
Emitter- Base Voltage VEBO : 12 V
Maximum Operating Frequency : 350 MHz
DC Collector/Base Gain hfe Min : 820


Description

The 2SD2114KT146V is one member of the 2SD2114 family which is designed as the epitaxial planar type NPN silicon transistor device that has some points of features:(1)High DC current gain: hFE = 1200 (Typ.); (2)High emitter-base voltage: VEBO =12V (Min.); (3)Low VCE(sat): VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA); (4)Pb-Free package is available.

The absolute maximum ratings of the 2SD2114KT146V can be summarized as:(1)Collector-base voltage: 25 V;(2)Collector-emitter voltage: 20 V;(3)Emitter-base voltage: 12 V;(4)Collector current: 0.5 or 1 A;(5)Collector power dissipation: 0.2 W;(6)Junction temperature: 150 ;(7)Storage temperature: -55 to +150 .

The electrical characteristics of 2SD2114KT146V can be summarized as:(1)Collector-base breakdown voltage: 25 V;(2)Collector-emitter breakdown voltage: 20 V;(3)Emitter-base breakdown voltage: 12 V;(4)Collector cutoff current: 0.5 uA;(5)Emitter cutoff current: 0.5 uA;(6)Collector-emitter saturation voltage: 0.18 V to 0.4 V;(7)DC current transfer ratio: 820 to 2700;(8)Transition frequency: 350 MHz;(9)Output capacitance: 8.0 pF;(10)Output On-resistance: 0.8 pF. If you want to know more information about the 2SD2114KT146V, please download the datasheet in www.seekic.com or www.chinaicmart.com.




Parameters:

Technical/Catalog Information2SD2114KT146V
VendorRohm Semiconductor(VA)
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)20V
Current - Collector (Ic) (Max)500mA
Power - Max200mW
DC Current Gain (hFE) (Min) @ Ic, Vce820 @ 10mA, 3V
Vce Saturation (Max) @ Ib, Ic400mV @ 20mA, 50mA
Frequency - Transition350MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseSC-59-3, SMT3, SOT-346, TO-236
PackagingDigi-Reel?
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2SD2114KT146V
2SD2114KT146V
2SD2114KT146VDKR ND
2SD2114KT146VDKRND
2SD2114KT146VDKR



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